mar-02-2001 1 bc 847bl3, bc 848bl3 2 3 1 npn silicon af transistor preliminary data for af input stage and driver applications high current gain low collector-emitter saturation voltage complementary types: bc 857bl3, bc 858bl3 (pnp) type marking pin configuration package bc 847bl3 bc 848bl3 1f 1k 1 = b 1 = b 2 = e 2 = e 3 = c 3 = c tslp-3 tslp-3 maximum ratings parameter symbol value unit collector-emitter voltage bc 847bl3 bc 848bl3 v ceo 45 30 v collector-emitter voltage bc 847bl3 bc 848bl3 v ces 50 30 collector-base voltage bc 847bl3 bc 848bl3 v cbo 50 30 emitter-base voltage bc 847bl3 bc 848bl3 v ebo 6 5 collector current i c 100 ma peak collector current i cm 200 total power dissipation- t s = tbd p tot 250 mw junction temperature t j 150 c thermal resistance parameter symbol value unit junction ambient- r thja tbd k/w junction - soldering point r thjs tbd
mar-02-2001 2 bc 847bl3, bc 848bl3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 , bc 847bl3 i c = 10 ma, i b = 0 , bc 848bl3 v (br)ceo 45 30 - - - - v collector-base breakdown voltage i c = 10 a, i b = 0 , bc 847bl3 i c = 10 a, i b = 0 , bc 848bl3 v (br)cbo 50 30 - - - - v v collector-emitter breakdown voltage i c = 10 a, v be = 0 , bc 847bl3 i c = 10 a, v be = 0 , bc 848bl3 v (br)ces 50 30 - - - - v - emitter-base breakdown voltage i e = 1 a, i c = 0 , bc 847bl3 i e = 1 a, i c = 0 , bc 848bl3 v (br)ebo 6 5 - - - - v v collector -base cutoff current v cb = 30 v, i e = 0 v cb = 30 v, i e = 0 , t a = 150 c i cbo - - - - 15 5 na a dc current gain- i c = 10 a, v ce = 5 v i c = 2 ma, v ce = 5 v h fe - 200 250 290 - 450 - collector-emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v cesat - - 90 200 250 600 mv base emitter saturation voltage- 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v besat - - 700 900 - - base-emitter voltage- 1) i c = 2 ma, v ce = 5 v i c = 10 ma, v ce = 5 v v be(on) 580 - 660 - 700 770 1 pulse test: t 300s, d = 2%
mar-02-2001 3 bc 847bl3, bc 848bl3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 10 ma, v ce = 5 v, f = 100 mhz f t - 250 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3 - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 8 - short-circuit input impedance i c = 2 ma, v ce = 5 v, f = 1 khz h 11e - 4.5 - k open-circuit reverse voltage transf. ratio i c = 2 ma, v ce = 5 v, f = 1 khz h 12e - 2 - 10 -4 short-circuit forward current transf. ratio i c = 2 ma, v ce = 5 v, f = 1 khz h 21e - 330 - - open-circuit output admittance i c = 2 ma, v ce = 5 v, f = 1 khz h 22e - 30 - s
mar-02-2001 4 bc 847bl3, bc 848bl3 collector-base capacitance c cb = ( v cb0 ) emitter-base capacitance c eb = ( v eb0 ) 0 4 10 5 10 10 ehp00361 v cb0 c eb0 v 6 2 eb0 v eb c 8 10 pf 12 cb0 c -1 0 1 c cb ( ( ) bc 846...850 ) transition frequency f t = ( i c ) v ce = 5 v 10 10 10 10 ehp00363 f ma mhz -1 0 1 2 5 t 3 10 10 2 1 10 5 5 5 c base-emitter saturation voltage i c = ( v besat ), h fe = 10 0 10 ehp00364 besat v 0.6 v 1.2 -1 10 0 10 1 2 10 5 5 c ma 0.2 0.4 0.8 c 25 c 100 c -50 c collector-emitter saturation voltage i c = ( v cesat ), h fe = 10 10 0 ehp00367 v cesat 10 ma 10 c 10 2 1 0 -1 5 5 v 0.3 0.5 100 25 -50 0.1 0.2 0.4 c c c
mar-02-2001 5 bc 847bl3, bc 848bl3 dc current gain h fe = ( i c ) v ce = 1 v 10 10 10 10 ehp00365 h ma -2 -1 12 fe 3 10 10 2 0 10 5 5 10 1 0 10 5 555 100 25 -50 c c c c collector cutoff current i cbo = ( t a ) v cbo = 25 v 10 0 50 100 150 ehp00415 t a 10 na 10 cb0 10 10 4 3 2 1 0 max typ 5 5 5 ?c h parameter h e = ( i c ) normalized v ce = 5v 10 10 10 ehp00368 ma -1 0 1 5 e h 2 10 -1 10 1 10 10 0 5 5 5 h 11e h 12e h 21e h 22e v ce = 5 v c h parameter h e = ( v ce ) normalized i c = 2ma 0 0102030 ehp00369 v ce h e v 1.0 0.5 1.5 2.0 = 2 ma h h h h e e e e 21 11 12 22 c
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